Manufacturer Part Number
HIP2101IR
Manufacturer
Renesas Electronics America
Introduction
The Renesas Electronics HIP2101IR is a high-performance, dual-channel, half-bridge gate driver designed for driving N-channel power MOSFETs or IGBTs. It operates from a 9V to 14V supply and features low quiescent current, adjustable dead-time, and high-side bootstrap capability for driving high-side power switches.
Product Features and Performance
Dual-channel, half-bridge gate driver
Operates from 9V to 14V supply
Low quiescent current
Adjustable dead-time
High-side bootstrap capability
Peak output current of 2A source/sink
Fast rise/fall time of 10ns (typical)
Wide operating temperature range of -55°C to 150°C (TJ)
Product Advantages
Efficient control of power MOSFETs or IGBTs
Flexible configuration options
Robust and reliable performance
Key Reasons to Choose This Product
High-performance gate driver solution
Optimized for driving power switches in various power conversion applications
Proven reliability and long-term availability from Renesas Electronics
Quality and Safety Features
Designed and manufactured to high-quality standards
Tested for reliable operation in harsh environments
Compatibility
The HIP2101IR is compatible with a wide range of power MOSFETs and IGBTs, making it suitable for use in various power conversion applications.
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
The HIP2101IR is an obsolete product, meaning it is no longer in active production. However, Renesas Electronics may have equivalent or alternative models available. Customers are advised to contact our website's sales team for more information on available options.