HIP2101IBZT - Intersil

Manufacturer Part Number

HIP2101IBZT

Manufacturer

Renesas Electronics America

Introduction

The HIP2101IBZT is a high-performance, half-bridge gate driver IC designed for efficiently driving N-Channel MOSFET power stages. It features independent gate driver channels, high-side and low-side gate driver outputs, and a wide operating voltage range.

Product Features and Performance

Driven Configuration: Half-Bridge

Channel Type: Independent

Number of Drivers: 2

Gate Type: N-Channel MOSFET

Voltage Supply: 9V ~ 14V

Logic Voltage VIL, VIH: 0.8V, 2.2V

Current Peak Output (Source, Sink): 2A, 2A

Input Type: Non-Inverting

High Side Voltage Max (Bootstrap): 114 V

Rise / Fall Time (Typ): 10ns, 10ns

Operating Temperature: -55°C ~ 150°C (TJ)

Product Advantages

Efficiently drives N-Channel MOSFET power stages

Independent gate driver channels for flexible design

Wide operating voltage range for diverse applications

Fast switching speeds for high-frequency operation

Key Reasons to Choose This Product

Reliable and robust performance for critical power applications

Versatile design accommodates various MOSFET configurations

Optimized for high-efficiency power conversion

Suitable for a wide range of operating temperatures

Quality and Safety Features

Proven Renesas quality and reliability

Compliance with industry standards for safety and performance

Compatibility

The HIP2101IBZT is compatible with a variety of N-Channel MOSFET power devices and can be used in a wide range of power conversion and motor control applications.

Application Areas

Switch-mode power supplies

Motor drives

Industrial automation and control

Renewable energy systems

Automotive electronics

Product Lifecycle

The HIP2101IBZT is an active product, and Renesas continues to support it. There are no known equivalent or alternative models at this time. For the latest product information or to explore alternative options, please contact our website's sales team.