Manufacturer Part Number
IS62WV51216BLL-55TLI-TR
Manufacturer
Integrated Silicon Solution
Introduction
High-speed low-power SRAM memory ideal for electronics requiring quick data access
Product Features and Performance
8Mbit storage capacity
Asynchronous SRAM technology
Access time of 55 nanoseconds
Parallel memory interface for quick data transfer
Supports wide voltage range from 2.5V to 3.6V
Operational temperature range from -40°C to 85°C
Surface mount technology for compact PCB design
Product Advantages
Quick data retrieval with 55ns access time
Low power consumption
High reliability under extended temperatures
Maintains stability over a range of voltages
Key Technical Parameters
Memory Type: Volatile SRAM
Memory Size: 8Mbit
Memory Organization: 512K x 16
Write Cycle Time: 55ns
Supply Voltage: 2.5V to 3.6V
Operating Temperature: -40°C to 85°C
Package: 44-TSOP II
Quality and Safety Features
Robust operational temperature range ensures reliability
Stable performance within voltage specifications
Compliance with industry safety standards
Compatibility
Compatible with systems requiring 44-TSOP II package SRAM
Suited for parallel interface architectures
Application Areas
Embedded systems
Telecommunications
Automotive electronics
Industrial automation systems
Medical devices
Product Lifecycle
Active product status
Not reported as nearing discontinuation
Availability of replacements or upgrades not indicated
Several Key Reasons to Choose This Product
Fast access time suitable for time-sensitive applications
Wide operating voltage and temperature ranges for diverse environments
Low power SRAM technology enhances battery longevity in portable devices
High capacity for memory-intensive tasks
Reliable data storage solution from a recognized manufacturer
IS62WV51216BLL-55TIntegrated Silicon Solution, Inc. (ISSI)
IS62WV51216EBLL-45BLIISSI, Integrated Silicon Solution IncIC SRAM 8MBIT PARALLEL 48VFBGA