IS62WV51216BLL-55BI - ISSI, Integrated Silicon Solution Inc

Manufacturer Part Number

IS62WV51216BLL-55BI

Manufacturer

Integrated Silicon Solution, Inc. (ISSI)

Introduction

This is a high-performance, low-power asynchronous SRAM memory integrated circuit from Integrated Silicon Solution, Inc. (ISSI).

Product Features and Performance

8Mbit memory capacity

512K x 16-bit memory organization

55ns access time

Parallel memory interface

55ns write cycle time (word, page)

Operating voltage range: 2.5V to 3.6V

Operating temperature range: -40°C to 85°C

Product Advantages

High-speed performance with low power consumption

Wide operating voltage and temperature range

Parallel interface for easy integration

Compact 48-TFBGA (6x8) package

Key Technical Parameters

Memory Type: Volatile SRAM

Memory Size: 8Mbit

Memory Organization: 512K x 16-bit

Access Time: 55ns

Write Cycle Time: 55ns (word, page)

Operating Voltage: 2.5V to 3.6V

Operating Temperature: -40°C to 85°C

Quality and Safety Features

RoHS3 compliant

48-TFBGA (6x8) package

Compatibility

This SRAM memory IC is widely compatible with various electronic systems and applications that require high-speed, low-power volatile memory.

Application Areas

Embedded systems

Industrial automation

Consumer electronics

Telecommunications equipment

Portable devices

Product Lifecycle

This SRAM memory product is currently in active production and there are no plans for discontinuation. Replacement or upgrade options may be available from the manufacturer or authorized distributors.

Key Reasons to Choose This Product

High-performance with low power consumption

Wide operating voltage and temperature range

Compact and space-efficient 48-TFBGA (6x8) package

Parallel interface for easy integration into various systems

Reliable and RoHS3 compliant for use in diverse applications