Manufacturer Part Number
IS62WV51216BLL-55BI
Manufacturer
Integrated Silicon Solution, Inc. (ISSI)
Introduction
This is a high-performance, low-power asynchronous SRAM memory integrated circuit from Integrated Silicon Solution, Inc. (ISSI).
Product Features and Performance
8Mbit memory capacity
512K x 16-bit memory organization
55ns access time
Parallel memory interface
55ns write cycle time (word, page)
Operating voltage range: 2.5V to 3.6V
Operating temperature range: -40°C to 85°C
Product Advantages
High-speed performance with low power consumption
Wide operating voltage and temperature range
Parallel interface for easy integration
Compact 48-TFBGA (6x8) package
Key Technical Parameters
Memory Type: Volatile SRAM
Memory Size: 8Mbit
Memory Organization: 512K x 16-bit
Access Time: 55ns
Write Cycle Time: 55ns (word, page)
Operating Voltage: 2.5V to 3.6V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
RoHS3 compliant
48-TFBGA (6x8) package
Compatibility
This SRAM memory IC is widely compatible with various electronic systems and applications that require high-speed, low-power volatile memory.
Application Areas
Embedded systems
Industrial automation
Consumer electronics
Telecommunications equipment
Portable devices
Product Lifecycle
This SRAM memory product is currently in active production and there are no plans for discontinuation. Replacement or upgrade options may be available from the manufacturer or authorized distributors.
Key Reasons to Choose This Product
High-performance with low power consumption
Wide operating voltage and temperature range
Compact and space-efficient 48-TFBGA (6x8) package
Parallel interface for easy integration into various systems
Reliable and RoHS3 compliant for use in diverse applications
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