Manufacturer Part Number
IS61LV2568L-10TL
Manufacturer
Integrated Silicon Solution, Inc. (ISSI)
Introduction
This is a 2Mbit Asynchronous SRAM (Static Random Access Memory) integrated circuit from Integrated Silicon Solution, Inc. (ISSI).
Product Features and Performance
2Mbit (256K x 8) Asynchronous SRAM
10ns Access Time
10ns Write Cycle Time
Parallel Memory Interface
Operates on 3.135V to 3.6V power supply
Available in 44-TSOP II package
Product Advantages
High-speed performance with 10ns access and write cycle times
Wide operating voltage range from 3.135V to 3.6V
Compact 44-TSOP II package for space-efficient designs
Suitable for a variety of applications requiring fast, non-volatile memory
Key Technical Parameters
Memory Size: 2Mbit (256K x 8)
Memory Type: Volatile SRAM
Access Time: 10ns
Write Cycle Time: 10ns
Operating Voltage: 3.135V to 3.6V
Operating Temperature: 0°C to 70°C
Quality and Safety Features
RoHS3 Compliant
44-TSOP II package
Compatibility
This SRAM IC is compatible with a wide range of electronic devices and systems that require high-speed, non-volatile memory.
Application Areas
Embedded systems
Industrial automation and control
Telecommunications equipment
Consumer electronics
Computer and networking equipment
Product Lifecycle
This SRAM product is an active and widely available component. There are no indications of it being discontinued or reaching the end of its lifecycle. Replacement and upgrade options are readily available from the manufacturer and authorized distributors.
Key Reasons to Choose This Product
High-performance with 10ns access and write cycle times, enabling fast data access and processing.
Wide operating voltage range from 3.135V to 3.6V, providing flexibility for various power supply conditions.
Compact 44-TSOP II package, allowing for space-efficient board design and integration.
Proven reliability and quality, with RoHS3 compliance and manufacturer's reputation.
Suitability for a broad range of applications, from embedded systems to industrial and consumer electronics.