Manufacturer Part Number
IS61LV25616AL-10T
Manufacturer
Integrated Silicon Solution Inc.
Introduction
High-speed 4Mbit SRAM chip with parallel interface
Product Features and Performance
Volatile memory
Asynchronous SRAM technology
4Mbit memory size
256K x 16 organization
10ns write cycle time
10ns access time
Product Advantages
Rapid access and write speeds
Stable parallel interface operation
High integration density for data storage
Key Technical Parameters
Memory Type: SRAM - Asynchronous
Memory Size: 4Mbit
Memory Organization: 256K x 16
Write Cycle Time - Word, Page: 10ns
Access Time: 10 ns
Voltage Supply Range: 3.135V to 3.6V
Operating Temperature Range: 0°C to 70°C
Quality and Safety Features
Conforms to industry standards for SRAM
Robust TSOP packaging for surface mount
Compatibility
Parallel memory interface compatible with a range of microcontrollers and digital signal processors
Application Areas
Embedded systems
Communication equipment
Industrial electronics
Automotive electronics
Product Lifecycle
Obsolete
Potential for replacement or upgrade options available
Key Reasons to Choose This Product
High-speed operation for time-sensitive applications
Reliable data retention for volatile memory needs
Wide operating voltage and temperature ranges suitable for various environments
Legacy support for older systems requiring parallel SRAM
High-density memory storage in a compact 44-TSOP II package
IS61LV25616-12TIIntegrated Silicon Solution, Inc. (ISSI)
IS61LV25616AL-10BLIISSI, Integrated Silicon Solution IncIC SRAM 4MBIT PARALLEL 48TFBGA
IS61LV256AL-10TLIISSI, Integrated Silicon Solution IncIC SRAM 256KBIT PAR 28TSOP I