IS43DR16640C-3DBLI - ISSI, Integrated Silicon Solution Inc

Manufacturer Part Number

IS43DR16640C-3DBLI

Manufacturer

Integrated Silicon Solution

Introduction

This product is a high-speed DDR2 SDRAM designed for applications that require fast memory operations.

Product Features and Performance

Memory Type: Volatile

Memory Format: DRAM

Technology: SDRAM DDR2

Memory Size: 1Gbit

Memory Organization: 64M x 16

Memory Interface: Parallel

Clock Frequency: 333 MHz

Write Cycle Time Word, Page: 15ns

Access Time: 450 ps

Product Advantages

High memory bandwidth suitable for advanced computing systems

Low write cycle time and access time enhancing data processing speeds

Supports a wide range of voltage supplies (1.7V ~ 1.9V) promoting compatibility with various system voltages

Key Technical Parameters

Voltage Supply: 1.7V ~ 1.9V

Clock Frequency: 333 MHz

Operating Temperature: -40°C ~ 85°C (TA)

Packaging: 84-TFBGA

Supplier Device Package: 84-TWBGA (8x12.5)

Quality and Safety Features

Operates efficiently across extreme temperature ranges from -40°C to 85°C

Robust surface mount packaging ensures durability and long-term reliability

Compatibility

Interface compatible with systems requiring DDR2 SDRAM with a Parallel interface

Suitable for a wide variety of voltage ranges facilitating diverse application uses

Application Areas

High-performance computing systems

Advanced digital signal processing

Memory-intensive server applications

Product Lifecycle

Status: Active

Not nearing discontinuation, ensuring long-term availability and support

Upgrades or replacements are regularly available to keep up with technological advancements

Several Key Reasons to Choose This Product

High-speed memory enhances overall system performance

Wide temperature and voltage operational ranges offer great flexibility in system design

Reliable and stable performance ensured by robust quality and safety features

Current active status ensures ongoing manufacturer support and availability