Manufacturer Part Number
IS43DR16640C-3DBLI
Manufacturer
Integrated Silicon Solution
Introduction
This product is a high-speed DDR2 SDRAM designed for applications that require fast memory operations.
Product Features and Performance
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM DDR2
Memory Size: 1Gbit
Memory Organization: 64M x 16
Memory Interface: Parallel
Clock Frequency: 333 MHz
Write Cycle Time Word, Page: 15ns
Access Time: 450 ps
Product Advantages
High memory bandwidth suitable for advanced computing systems
Low write cycle time and access time enhancing data processing speeds
Supports a wide range of voltage supplies (1.7V ~ 1.9V) promoting compatibility with various system voltages
Key Technical Parameters
Voltage Supply: 1.7V ~ 1.9V
Clock Frequency: 333 MHz
Operating Temperature: -40°C ~ 85°C (TA)
Packaging: 84-TFBGA
Supplier Device Package: 84-TWBGA (8x12.5)
Quality and Safety Features
Operates efficiently across extreme temperature ranges from -40°C to 85°C
Robust surface mount packaging ensures durability and long-term reliability
Compatibility
Interface compatible with systems requiring DDR2 SDRAM with a Parallel interface
Suitable for a wide variety of voltage ranges facilitating diverse application uses
Application Areas
High-performance computing systems
Advanced digital signal processing
Memory-intensive server applications
Product Lifecycle
Status: Active
Not nearing discontinuation, ensuring long-term availability and support
Upgrades or replacements are regularly available to keep up with technological advancements
Several Key Reasons to Choose This Product
High-speed memory enhances overall system performance
Wide temperature and voltage operational ranges offer great flexibility in system design
Reliable and stable performance ensured by robust quality and safety features
Current active status ensures ongoing manufacturer support and availability
IS43DR16640C-3DBLI-TR
IS43DR16640B-25DBLTIntegrated Silicon Solution, Inc. (ISSI)