Manufacturer Part Number
IS43DR16640C-3DBL
Manufacturer
Integrated Silicon Solution
Introduction
High-speed DDR2 SDRAM for memory-intensive applications
Product Features and Performance
DDR2 SDRAM Technology
1Gbit Memory Size
64M x 16 Memory Organization
Parallel Memory Interface
333 MHz Clock Frequency
15ns Write Cycle Time
450 ps Access Time
7V ~ 1.9V Supply Voltage Range
0°C ~ 85°C Operating Temperature Range
Surface Mount Mounting Type
84-TFBGA Package for compact integration
Volatile Memory Type for high-speed operation
Product Advantages
Optimized for high-speed computing
Improved system performance with fast access time
Efficient power usage within the voltage supply range
Robust temperature tolerance for reliability
Compact TFBGA package for space-sensitive applications
Key Technical Parameters
Memory Size: 1Gbit
Memory Organization: 64M x 16
Clock Frequency: 333 MHz
Access Time: 450 ps
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 85°C
Quality and Safety Features
Extended operational temperature range for reliability
Designed for high-reliability applications
Compatibility
Compatible with systems requiring DDR2 SDRAM technology
Parallel interface for broad electronics compatibility
Application Areas
Computer Systems
Telecommunications
Gaming Consoles
Digital Signal Processing
Product Lifecycle
Active status, not nearing discontinuation
Availability of replacements or upgrades aligned with DDR2 technology upgrades
Several Key Reasons to Choose This Product
High-speed memory enhances computing efficiency
Large memory organization suits complex processes
Reliable operation within a wide voltage and temperature range
Versatile use with various electronics due to compatibility features
Long product lifecycle ensuring sustained support and availability
IS43DR81280A-3DBLIntegrated Silicon Solution, Inc. (ISSI)
IS43DR81280C-25DBLIISSI, Integrated Silicon Solution IncIC DRAM 1GBIT PARALLEL 60TWBGA
IS43DR81280A-3DBLIISSI, Integrated Silicon Solution IncIC DRAM 1GBIT PARALLEL 60TWBGA