IS43DR16320D-3DBLI - ISSI, Integrated Silicon Solution Inc

Manufacturer Part Number

IS43DR16320D-3DBLI

Manufacturer

Integrated Silicon Solution Inc.

Introduction

High-speed DDR2 SDRAM designed for high-performance computing applications

Product Features and Performance

512Mbit DDR2 SDRAM memory component

Data rates of up to 333 MHz

Ideal for advanced computing systems requiring high bandwidth

Parallel memory interface for traditional DRAM signal processing

Fast access time of 450 picoseconds

Supports a range of clock frequencies for flexible system design

Write Cycle Time of 15 nanoseconds for efficient data handling

Product Advantages

Enhanced data bandwidth for improved system performance

Robust thermal performance with operating temperature range from -40°C to 85°C

Stable operation over a wide voltage range (1.7V to 1.9V)

Key Technical Parameters

Memory Size: 512Mbit

Memory Organization: 32M x 16

Clock Frequency: 333 MHz

Write Cycle Time - Word, Page: 15ns

Access Time: 450 ps

Voltage - Supply: 1.7V ~ 1.9V

Operating Temperature: -40°C ~ 85°C (TA)

Quality and Safety Features

Extended operating temperature range for high reliability

Designed to meet rigorous industrial standards

Compatibility

Surface mount compatible with 84-TFBGA packaging

Designed for parallel interface systems

Application Areas

Suitable for advanced computing, networking, and telecommunications

Ideal for high-speed data processing and storage applications

Product Lifecycle

Product Status: Not For New Designs

Indicates nearing end of lifecycle with potential for discontinuation

Replacements or upgrades may be available

Reasons to Choose This Product

Reliable high-speed DDR2 memory performance

Capable of supporting intensive computing applications

High data rate and bandwidth improve overall system throughput

Operational stability across a broad temperature range

Versatile supply voltage range for varied design requirements

Easy integration with surface mount technology systems