Manufacturer Part Number
IS43DR16320C-3DBL
Manufacturer
Integrated Silicon Solution, Inc. (ISSI)
Introduction
This product is a high-performance integrated circuit (IC) that serves as a Dynamic Random Access Memory (DRAM) module.
Product Features and Performance
512Mbit memory capacity
DDR2 SDRAM technology
333MHz clock frequency
450ps access time
15ns write cycle time
Parallel memory interface
32M x 16 memory organization
7V ~ 1.9V supply voltage
0°C ~ 70°C operating temperature range
Product Advantages
Efficient and reliable data storage and retrieval
High-speed performance for demanding applications
Low power consumption
Wide operating temperature range
Key Technical Parameters
Memory type: Volatile DRAM
Package: 84-TWBGA (8x12.5)
Mounting type: Surface mount
RoHS compliance: ROHS3 Compliant
Quality and Safety Features
Rigorous quality control and testing
Compliance with relevant safety standards
Compatibility
This DRAM module is compatible with a wide range of electronic devices and systems that require high-performance, low-power memory solutions.
Application Areas
Embedded systems
Networking equipment
Industrial automation
Consumer electronics
Product Lifecycle
This DRAM module is a current production item and is not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer or authorized distributors.
Key Reasons to Choose This Product
High-performance and reliable data storage
Low power consumption for energy-efficient operation
Wide operating temperature range for versatile applications
Compatibility with a variety of electronic devices and systems
Compliance with relevant quality and safety standards
IS43DR16320B-37CBLIIntegrated Silicon Solution, Inc. (ISSI)
IS43DR16320B-3DBIISSI, Integrated Silicon Solution IncIC DRAM 512MBIT PARALLEL 84TWBGA