Manufacturer Part Number
VMO1200-01F
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor designed for high-power, high-current applications
Product Features and Performance
Capable of handling continuous drain current up to 1220A at 25°C case temperature
Low on-resistance of 1.35 mΩ @ 932A, 10V
Wide operating temperature range of -40°C to 150°C
High drain-source voltage rating of 100V
Fast switching speed and low gate charge of 2520 nC @ 10V
Product Advantages
Excellent thermal management and high current handling capability
Efficient power conversion with low conduction losses
Suitable for demanding high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1.35 mΩ @ 932A, 10V
Continuous Drain Current (Id): 1220A @ 25°C
Gate Charge (Qg): 2520 nC @ 10V
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of high-power applications, including motor drives, power supplies, and industrial automation
Application Areas
High-power motor drives
Power converters and inverters
Industrial automation and control systems
Welding equipment
Variable frequency drives
Product Lifecycle
This product is actively supported and not nearing discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Exceptional current handling and low on-resistance for efficient power conversion
Wide operating temperature range for reliability in demanding environments
Fast switching and low gate charge for high-frequency operation
Robust design and quality manufacturing for long-term performance and reliability
