Manufacturer Part Number
VMO580-02F
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Products
Transistors FETs, MOSFETs Single
Product Features and Performance
RoHS3 Compliant
Operating Temperature: -40°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 430A, 10V
Technology: MOSFET (Metal Oxide)
Current Continuous Drain (Id) @ 25°C: 580A (Tc)
FET Type: N-Channel
Vgs(th) (Max) @ Id: 4V @ 50mA
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 2750 nC @ 10 V
Product Advantages
Robust and reliable performance
High current handling capability
Low on-resistance
Key Technical Parameters
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 430A, 10V
Current Continuous Drain (Id) @ 25°C: 580A (Tc)
Vgs(th) (Max) @ Id: 4V @ 50mA
Gate Charge (Qg) (Max) @ Vgs: 2750 nC @ 10 V
Quality and Safety Features
RoHS3 Compliant
Compatibility
Chassis Mount
Application Areas
Suitable for high-power and high-current applications
Product Lifecycle
No information on discontinuation or availability of replacements/upgrades
Several Key Reasons to Choose This Product
Robust and reliable performance
High current handling capability
Low on-resistance
Suitable for high-power and high-current applications
