Manufacturer Part Number
MWI75-12E8
Manufacturer
IXYS Corporation
Introduction
This product is a discrete semiconductor device, specifically an IGBT (Insulated-Gate Bipolar Transistor) module, that is part of the MWI75 series.
Product Features and Performance
Three-phase inverter configuration
500 W maximum power
1200 V collector-emitter breakdown voltage
130 A maximum collector current
5 V maximum collector-emitter saturation voltage at 15 V gate-emitter voltage and 75 A collector current
7 nF input capacitance at 25 V collector-emitter voltage
-40°C to 125°C operating temperature range
Product Advantages
Reliable and efficient power switching
Suitable for a variety of three-phase inverter applications
Compact and robust package
Key Technical Parameters
IGBT Type: NPT (Non-Punch-Through)
Input: Standard
NTC Thermistor: No
Mounting Type: Chassis Mount
Quality and Safety Features
Designed and manufactured to high-quality standards
Suitable for use in demanding applications
Compatibility
This IGBT module is compatible with various three-phase inverter systems and can be used in a wide range of applications.
Application Areas
Motor drives
Power supplies
Renewable energy systems
Industrial automation
Electric vehicles
Power conversion
Product Lifecycle
This product is currently available and actively supported by the manufacturer. Replacements and upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
Reliable and efficient power switching performance
Suitable for a variety of three-phase inverter applications
Compact and robust package design
Compatibility with various systems and applications
Manufactured to high-quality standards for demanding use cases