Manufacturer Part Number
MWI50-12E7
Manufacturer
IXYS Corporation
Introduction
IGBT (Insulated Gate Bipolar Transistor) module
Part of the IXYS ISOPLUS i4-package family
Product Features and Performance
Rated for 350W of power
NPT IGBT technology
Standard input configuration
Three-phase inverter configuration
Input capacitance of 3.8nF at 25V
Collector-Emitter breakdown voltage of 1200V
Max collector current of 90A
Max collector-emitter saturation voltage of 2.4V at 15V gate, 50A collector
Product Advantages
Efficient power conversion
High voltage and current handling capabilities
Robust industrial design
Key Technical Parameters
Operating temperature range: -40°C to 125°C
Mounting type: Chassis mount
Package/case: E2
Quality and Safety Features
No NTC thermistor included
Compatibility
Suitable for various industrial and power electronics applications
Application Areas
Inverters
Motor drives
Power conversion equipment
Product Lifecycle
Current product, no indication of discontinuation
Replacement and upgrade options may be available from IXYS
Key Reasons to Choose This Product
High power handling capacity
Robust thermal performance
Efficient IGBT technology
Compact and industrial-grade package
