Manufacturer Part Number
MKI50-12E7
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistors - IGBTs - Modules
Product Features and Performance
Chassis Mount Packaging
NPT IGBT Type
Full Bridge Inverter Configuration
High Input Capacitance: 3.8 nF @ 25 V
High Voltage Capability: 1200 V Collector-Emitter Breakdown Voltage
High Current Capability: 90 A Collector Current, 800 A Collector Cutoff Current
Low Saturation Voltage: 2.4 V @ 15 V, 50 A Collector-Emitter Voltage
Product Advantages
Efficient Power Conversion
High Power Density
Robust Design
Key Technical Parameters
Operating Temperature Range: -40°C to 125°C (Junction Temperature)
Maximum Power Rating: 350 W
Quality and Safety Features
Reliable and Durable Construction
Thermal Management for Safe Operation
Compatibility
Suitable for a wide range of power conversion applications
Application Areas
Industrial Drives
Renewable Energy Systems
Uninterruptible Power Supplies (UPS)
Power Factor Correction (PFC) Circuits
Product Lifecycle
Current product offering from IXYS Corporation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
High power handling capability
Efficient power conversion performance
Robust and reliable design
Suitable for a variety of power conversion applications