Manufacturer Part Number
MIXA300PF1200TSF
Manufacturer
IXYS Corporation
Introduction
High-power discrete semiconductor module
Insulated Gate Bipolar Transistor (IGBT) module
Product Features and Performance
Optimized for high-power applications
Capable of handling up to 1500 W of power
Supports a wide operating temperature range of -40°C to 150°C
Features a half-bridge configuration
Incorporates a PT (Punch-Through) IGBT design
Product Advantages
Robust and reliable performance
Efficient power handling capabilities
Wide temperature operating range
Flexible half-bridge configuration
Key Technical Parameters
Collector-Emitter Breakdown Voltage (max): 1200 V
Collector Current (max): 465 A
Collector-Emitter Saturation Voltage (max): 2.1 V
Collector Cutoff Current (max): 300 A
Integrated NTC thermistor for temperature monitoring
Quality and Safety Features
RoHS3 compliant
Chassis mount design for secure installation
Compatibility
Suitable for a variety of high-power applications
Application Areas
Inverters
Converters
Motor drives
Industrial control systems
Product Lifecycle
Current production model
Replacements and upgrades may be available
Key Reasons to Choose This Product
Robust and reliable performance for high-power applications
Efficient power handling capabilities
Wide temperature operating range for versatile use
Flexible half-bridge configuration for customized system design
Integrated safety features for enhanced reliability
