Manufacturer Part Number
MIXA225RF1200TSF
Manufacturer
IXYS Corporation
Introduction
Discrete semiconductor product
Transistor IGBT Module
Product Features and Performance
ROHS3 compliant
Chassis mount module
Operating temperature range: -40°C to 150°C (TJ)
Power rating: 1100 W
IGBT type: PT
Standard input
Single configuration
Collector-emitter breakdown voltage: 1200 V
Integrated NTC thermistor
Collector current (max): 360 A
Collector-emitter saturation voltage: 2.1 V @ 15 V, 225 A
Collector cutoff current (max): 300 A
Product Advantages
High power density
Wide operating temperature range
Overcurrent and overtemperature protection
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 360 A
Vce(on) (Max) @ Vge, Ic: 2.1 V @ 15 V, 225 A
Current Collector Cutoff (Max): 300 A
Quality and Safety Features
ROHS3 compliant
Integrated NTC thermistor for overtemperature protection
Compatibility
Compatible with standard chassis mount applications
Application Areas
Power conversion
Motor control
Renewable energy systems
Industrial automation
Product Lifecycle
Active product
Replacement and upgrade options available
Key Reasons to Choose This Product
High power density
Wide operating temperature range
Robust overcurrent and overtemperature protection
Proven reliability and performance