Manufacturer Part Number
MDI145-12A3
Manufacturer
IXYS Corporation
Introduction
The IXYS MDI145-12A3 is a high-power insulated-gate bipolar transistor (IGBT) module designed for industrial and power electronics applications.
Product Features and Performance
NPT (Non-Punch-Through) IGBT technology
Standard input configuration
Single-chip design
Input capacitance (Cies) of 6.5 nF at 25 V
Collector-emitter breakdown voltage (Vces) of 1200 V
Maximum collector current (Ic) of 160 A
On-state voltage (Vce(on)) of 2.7 V at 15 V gate voltage and 100 A collector current
Maximum collector-emitter cutoff current (Ices) of 6 mA
Operating temperature range of -40°C to 150°C (TJ)
Maximum power rating of 700 W
Product Advantages
Efficient and reliable power conversion
Robust design for industrial environments
Compact and space-saving package
Optimized for high-power applications
Key Technical Parameters
IGBT Type: NPT
Input Configuration: Standard
Package: Y4-M5 (Chassis Mount)
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 160 A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
Current Collector Cutoff (Max): 6 mA
Quality and Safety Features
RoHS3 compliant
Manufacturer's packaging: Y4-M5
Compatibility
This IGBT module is designed for use in a wide range of industrial and power electronics applications, such as motor drives, power inverters, and power converters.
Application Areas
Industrial motor drives
Power inverters
Power converters
Electric vehicles
Renewable energy systems
Product Lifecycle
The MDI145-12A3 is an actively supported product by IXYS Corporation. Replacements and upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
Efficient and reliable power conversion with NPT IGBT technology
Robust design for industrial environments
Compact and space-saving package
Optimized for high-power applications up to 700 W
Comprehensive technical parameters and features to meet various application requirements
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