Manufacturer Part Number
MDI300-12A4
Manufacturer
IXYS Corporation
Introduction
The MDI300-12A4 is a high-performance, single-module insulated gate bipolar transistor (IGBT) from IXYS Corporation. It is designed for use in a variety of industrial and power electronics applications.
Product Features and Performance
Rated for a maximum collector current of 330A
Designed for operation at up to 1200V collector-emitter voltage
Offers a low on-state voltage drop of 2.7V at 200A and 15V gate-emitter voltage
Features a compact Y3-DCB package for efficient heat dissipation
Capable of operating over a wide temperature range of -40°C to 150°C
Product Advantages
High power density and efficiency
Robust design for reliable performance
Compact package for space-constrained applications
Compatibility with a wide range of control systems
Key Technical Parameters
IGBT Type: Non-Punch-Through (NPT)
Input Capacitance (Cies): 13 nF @ 25V
Collector-Emitter Breakdown Voltage (VCES): 1200V
Collector Current (IC): 330A
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Rigorous quality control and testing during manufacturing
Compatibility
Suitable for use in a variety of industrial and power electronics applications, such as motor drives, power inverters, and power supplies.
Application Areas
Industrial motor drives
Power inverters and converters
Welding equipment
Power supplies
Other high-power electronics applications
Product Lifecycle
The MDI300-12A4 is an active product in IXYS Corporation's portfolio, with no known plans for discontinuation.
Replacement or upgraded products may become available in the future as technology advances.
Key Reasons to Choose This Product
High power capability and efficiency
Robust and reliable performance
Compact and space-saving design
Wide operating temperature range
Compatibility with a variety of control systems
Compliance with RoHS3 environmental regulations
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