Manufacturer Part Number
IXFX64N60P3
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET with low on-resistance and high voltage rating for power electronics applications.
Product Features and Performance
High voltage rating up to 600V
Low on-resistance of 95mΩ @ 32A, 10V
High continuous drain current of 64A at 25°C
Wide operating temperature range of -55°C to 150°C
High power dissipation of 1130W
Fast switching characteristics
Product Advantages
Efficient power conversion and control
Reliable operation in high-power applications
Compact design with high power density
Suitable for harsh environments
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 95mΩ @ 32A, 10V
Continuous Drain Current (Id): 64A @ 25°C
Input Capacitance (Ciss): 9900pF @ 25V
Power Dissipation (Pd): 1130W @ Tc
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Renewable energy systems
Product Lifecycle
Current product, no discontinuation or replacement plans known
Several Key Reasons to Choose This Product
Excellent performance in high-voltage, high-current applications
Efficient power conversion and control
Reliable and safe operation in harsh environments
Compact design with high power density
Suitable for a wide range of power electronics applications