Manufacturer Part Number
IXFX64N50P
Manufacturer
IXYS Corporation
Introduction
High-performance MOSFET transistor with excellent efficiency and power handling capabilities.
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
High drain-to-source voltage up to 500V
Low on-resistance of 85mΩ at 32A and 10V
High continuous drain current of 64A at 25°C
Low input capacitance of 8700pF at 25V
High power dissipation up to 830W at 25°C
N-channel MOSFET design
Product Advantages
Excellent power efficiency and heat dissipation
Robust and reliable performance
Wide range of applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 85mΩ @ 32A, 10V
Continuous Drain Current (Id): 64A @ 25°C
Input Capacitance (Ciss): 8700pF @ 25V
Power Dissipation (Ptot): 830W @ 25°C
Quality and Safety Features
RoHS3 compliant
Housed in PLUS247-3 (TO-247-3) package
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Uninterruptible power supplies (UPS)
Industrial automation and control
Renewable energy systems
Product Lifecycle
Current production model
Replacements and upgrades may be available
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Robust and reliable operation across wide temperature range
Versatile applications in power conversion and control systems
Proven IXYS MOSFET technology and quality