Manufacturer Part Number
IXDI609SIA
Manufacturer
IXYS Corporation
Introduction
This is a single-channel IGBT/MOSFET gate driver IC from IXYS Corporation.
Product Features and Performance
Supports IGBT, N-Channel MOSFET, and P-Channel MOSFET
Single-channel design
Inverting input type
Operating voltage range of 4.5V to 35V
Capable of driving up to 9A peak output current (source and sink)
Fast rise and fall times of 22ns and 15ns respectively
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient and reliable gate drive for IGBT and MOSFET power switches
Compact 8-SOIC package for space-constrained applications
Robust design and wide operating temperature range
Key Technical Parameters
Input voltage range: 4.5V to 35V
Logic voltage levels: 0.8V (VIL), 3V (VIH)
Peak output current (source and sink): 9A
Rise/fall time (typical): 22ns, 15ns
Operating temperature range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Packaged in 8-SOIC format
Compatibility
This gate driver IC is compatible with a variety of IGBT, N-Channel MOSFET, and P-Channel MOSFET devices.
Application Areas
Power electronics
Motor control
Inverters
Switching power supplies
Product Lifecycle
The IXDI609SIA is an active product, and IXYS Corporation continues to support and manufacture it. Replacement or upgraded products may be available in the future as technology advances.
Key Reasons to Choose This Product
Efficient and reliable gate drive for power semiconductor devices
Wide operating voltage and temperature range
Fast switching speeds for high-frequency applications
Compact 8-SOIC package for space-constrained designs
RoHS3 compliance for environmental regulations