Manufacturer Part Number
IXDI602D2TR
Manufacturer
IXYS Corporation
Introduction
Integrated Circuit (IC) for power management and control
Specifically designed as a gate driver for IGBT, N-Channel, and P-Channel MOSFET transistors
Product Features and Performance
Dual independent gate driver channels
Wide supply voltage range of 4.5V to 35V
Fast rise and fall times of 7.5ns and 6.5ns respectively
High peak output current of 2A for both source and sink
Operates over an extended temperature range of -55°C to 150°C
Product Advantages
Versatile gate driver for various power semiconductor devices
Compact 8-pin DFN-EP (5x4) package for space-saving design
Robust thermal performance and wide temperature range
Key Technical Parameters
Input type: Inverting
Logic voltage levels: 0.8V (VIL), 3V (VIH)
Driven configuration: Low-side
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Reliable and durable performance
Compatibility
Suitable for use with IGBT, N-Channel, and P-Channel MOSFET transistors
Application Areas
Industrial power electronics
Motor drives
Inverters and converters
Switch-mode power supplies
Product Lifecycle
Currently in active production
No immediate plans for discontinuation
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Versatile gate driver for a wide range of power semiconductor devices
Compact and space-saving package design
Robust thermal performance and wide operating temperature range
Fast switching times and high peak output current for efficient power control
RoHS3 compliance for environmental responsibility