FII40-06D - IXYS

Manufacturer Part Number

FII40-06D

Manufacturer

IXYS Corporation

Introduction

High performance insulated gate bipolar transistor (IGBT) array

Designed for use in power converter applications

Product Features and Performance

Rated for 125 W power

NPT IGBT technology

Standard input configuration

Half bridge configuration

Input capacitance of 1.6 nF at 25 V

Collector-emitter breakdown voltage up to 600 V

Collector current up to 40 A

Collector-emitter saturation voltage of 2.2 V at 15 V, 25 A

Maximum collector current cutoff of 600 A

Operating temperature range of -55°C to 150°C

Product Advantages

Compact ISOPLUS i4-PAC package

High power density

Robust performance

Suitable for a wide range of power conversion applications

Key Technical Parameters

IGBT Type: NPT

Configuration: Half Bridge

Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V

Voltage Collector Emitter Breakdown (Max): 600 V

Current Collector (Ic) (Max): 40 A

Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A

Current Collector Cutoff (Max): 600 A

Mounting Type: Through Hole

Quality and Safety Features

RoHS3 compliant

Designed for reliable and safe operation

Compatibility

Suitable for a wide range of power conversion applications

Application Areas

Power converters

Motor drives

Uninterruptible power supplies (UPS)

Welding equipment

Lighting systems

Product Lifecycle

This product is currently available and not nearing discontinuation

Replacement or upgrade options may be available from the manufacturer

Several Key Reasons to Choose This Product

High power density and compact ISOPLUS i4-PAC package

Robust NPT IGBT technology for reliable performance

Wide operating temperature range of -55°C to 150°C

Suitable for a broad range of power conversion applications

RoHS3 compliance for environmental responsibility