Manufacturer Part Number
HGTP3N60A4
Manufacturer
Harris Corporation
Introduction
Discrete Semiconductor Product
Single Transistor IGBT (Insulated Gate Bipolar Transistor)
Product Features and Performance
RoHS3 Compliant
TO-220-3 Package
Operating Temperature Range: -55°C to 150°C (TJ)
Power Rating: 70 W
Collector-Emitter Breakdown Voltage: 600 V
Collector Current (Max): 17 A
Collector-Emitter Saturation Voltage (Max): 2.7 V @ 15 V, 3 A
Gate Charge: 21 nC
Pulsed Collector Current: 40 A
Switching Energy: 37 J (on), 25 J (off)
Turn-on/Turn-off Delay Time: 6 ns / 73 ns
Through-Hole Mounting
Product Advantages
High power handling capability
Fast switching speed
Robust design for harsh environments
Key Technical Parameters
Collector-Emitter Breakdown Voltage
Collector Current
Collector-Emitter Saturation Voltage
Gate Charge
Switching Energy
Switching Time
Quality and Safety Features
RoHS3 Compliant
Suitable for high-power, high-voltage applications
Compatibility
Suitable for use in various power electronics circuits and systems
Application Areas
Power conversion
Motor drives
Inverters
Welding equipment
Industrial controls
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available from the manufacturer
Key Reasons to Choose This Product
High power handling capability
Fast switching speed for efficient power conversion
Robust design for reliable operation in harsh environments
RoHS3 compliance for environmentally friendly use
Compatibility with a wide range of power electronics applications
