Manufacturer Part Number
HGTP5N120BND
Manufacturer
onsemi
Introduction
High-performance, high-voltage IGBT transistor for demanding power applications.
Product Features and Performance
High voltage rating up to 1200V
High current handling up to 21A
Low collector-emitter saturation voltage (Vce(on))
Fast switching with short turn-on and turn-off times
Low switching losses
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent efficiency and reliability for high-power applications
Robust design for demanding environments
Ease of use with standard IGBT gate drive requirements
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 1200V
Collector Current (Continuous): 21A
Collector Current (Pulsed): 40A
Collector-Emitter Saturation Voltage: 2.7V @ 15V, 5A
Reverse Recovery Time: 65ns
Gate Charge: 53nC
Switching Energy: 450J (on), 390J (off)
Turn-on/off Delay Time: 22ns/160ns
Quality and Safety Features
RoHS3 compliant
Reliable through-hole mounting in TO-220-3 package
Compatibility
Suitable for use in a wide range of high-power, high-voltage applications.
Application Areas
Motor drives
Power supplies
Renewable energy systems
Welding equipment
Industrial automation
Transportation systems
Product Lifecycle
This product is currently in active production and widely available. No known plans for discontinuation or replacement at this time.
Key Reasons to Choose This Product
Excellent performance and reliability for demanding power applications
Wide voltage and current handling capabilities
Fast switching with low losses
Robust design for use in harsh environments
Ease of use with standard IGBT gate drive requirements
RoHS3 compliance for environmental responsibility
