Manufacturer Part Number
BAP65-02,115
Manufacturer
nxp-semiconductors
Introduction
The BAP65-02,115 is a high-performance PIN diode from NXP Semiconductors, suitable for a wide range of RF and microwave applications. This diode offers excellent linearity, low distortion, and outstanding power handling capabilities, making it an ideal choice for use in switches, attenuators, phase shifters, and other RF signal control circuits.
Product Features and Performance
PIN diode structure for high-performance RF signal control
Low series resistance of 350 mΩ at 100 mA, 100 MHz
Low junction capacitance of 0.375 pF at 20 V, 1 MHz
High power handling capability of 715 mW
Wide operating temperature range of -65°C to 150°C
Product Advantages
Excellent linearity and low distortion for superior RF signal control
Compact SOD-523 package for space-efficient design
Suitable for a wide range of RF and microwave applications
Reliable performance and long-term stability
Key Reasons to Choose This Product
Exceptional RF signal control performance
Compact and space-saving package design
Versatile application capabilities
Reliable and stable operation
Quality and Safety Features
Meets stringent quality and reliability standards
RoHS-compliant and environmentally friendly
Compatibility
The BAP65-02,115 is compatible with a variety of RF and microwave circuits, including switches, attenuators, phase shifters, and other signal control applications.
Application Areas
Wireless communications
Radar systems
Test and measurement equipment
Industrial and military electronics
Product Lifecycle
The BAP65-02,115 is an active product, and there are no plans for discontinuation at this time. NXP Semiconductors offers a range of equivalent or alternative PIN diode models that may be suitable for your application. Please contact our website's sales team for more information and assistance in selecting the right product for your needs.