Manufacturer Part Number
BAP64Q,125
Manufacturer
NXP Semiconductors
Introduction
High-performance RF diode designed for radio frequency and high-speed switching applications.
Product Features and Performance
PIN diode with two pair configuration (CA + CC)
Peak reverse voltage of 100V
Maximum current of 100 mA
Low capacitance of 0.35pF at 20V, 1MHz
Low resistance of 1.35 Ohm at 100mA, 100MHz
High power dissipation of 125 mW
Broad operating temperature range from -65°C to 150°C
Product Advantages
Optimized for high-speed switching
Low signal distortion
High power and voltage handling capabilities
Excellent thermal performance
Key Technical Parameters
Voltage - Peak Reverse (Max): 100V
Current - Max: 100 mA
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Power Dissipation (Max): 125 mW
Operating Temperature: -65°C ~ 150°C (TJ)
Quality and Safety Features
Robust construction for reliable performance
Compliance with industry safety standards
Compatibility
Packaged in SC-74A, SOT-753 for use with standard surface-mount technology
Suitable for 5-TSOP supplier device package
Application Areas
High-frequency and fast switching applications
RF signal processing
Wireless communication infrastructure
Portable and satellite communication
Product Lifecycle
Active product status
No known discontinuation at the time, with availability for replacements and upgrades
Key Reasons to Choose This Product
Excellent choice for high-speed switching and RF applications due to low capacitance and resistance
Suitable for harsh operating environments owing to its wide temperature range
High reverse voltage and current handling capabilities for robust performance
User-friendly package for easy integration into various systems
Manufactured by NXP Semiconductors, a reputable semiconductor provider
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