BAP64Q,125 - NXP USA Inc.

Manufacturer Part Number

BAP64Q,125

Manufacturer

NXP Semiconductors

Introduction

High-performance RF diode designed for radio frequency and high-speed switching applications.

Product Features and Performance

PIN diode with two pair configuration (CA + CC)

Peak reverse voltage of 100V

Maximum current of 100 mA

Low capacitance of 0.35pF at 20V, 1MHz

Low resistance of 1.35 Ohm at 100mA, 100MHz

High power dissipation of 125 mW

Broad operating temperature range from -65°C to 150°C

Product Advantages

Optimized for high-speed switching

Low signal distortion

High power and voltage handling capabilities

Excellent thermal performance

Key Technical Parameters

Voltage - Peak Reverse (Max): 100V

Current - Max: 100 mA

Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz

Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz

Power Dissipation (Max): 125 mW

Operating Temperature: -65°C ~ 150°C (TJ)

Quality and Safety Features

Robust construction for reliable performance

Compliance with industry safety standards

Compatibility

Packaged in SC-74A, SOT-753 for use with standard surface-mount technology

Suitable for 5-TSOP supplier device package

Application Areas

High-frequency and fast switching applications

RF signal processing

Wireless communication infrastructure

Portable and satellite communication

Product Lifecycle

Active product status

No known discontinuation at the time, with availability for replacements and upgrades

Key Reasons to Choose This Product

Excellent choice for high-speed switching and RF applications due to low capacitance and resistance

Suitable for harsh operating environments owing to its wide temperature range

High reverse voltage and current handling capabilities for robust performance

User-friendly package for easy integration into various systems

Manufactured by NXP Semiconductors, a reputable semiconductor provider