Manufacturer Part Number
MW6S010GNR1
Manufacturer
NXP Semiconductors
Introduction
The MW6S010GNR1 is a high-performance LDMOS transistor designed for radio frequency (RF) power amplifier applications.
Product Features and Performance
10W output power
18dB gain
Operating frequency of 960MHz
Rated voltage of 68V
Test voltage of 28V
Test current of 125mA
Product Advantages
Excellent RF performance
High power handling capability
Efficient operation
Reliable and durable
Key Technical Parameters
Technology: LDMOS
Packaging: TO-270-2 GULL, Surface Mount
RoHS Compliant
Quality and Safety Features
Meets RoHS3 compliance standards
Compatibility
Suitable for various RF power amplifier designs
Application Areas
Suitable for use in RF power amplifier circuits, including those found in communication systems, broadcast equipment, and industrial applications.
Product Lifecycle
This product is currently in production and available for purchase.
Key Reasons to Choose This Product
Reliable and durable performance
Efficient operation with high output power
Suitable for a wide range of RF power amplifier applications
Meets RoHS compliance standards for environmental safety