Manufacturer Part Number
MW6S004NT1
Manufacturer
NXP Semiconductors
Introduction
High-performance LDMOS transistor for RF power applications
Product Features and Performance
Power output: 4W
Operating current: 50mA
Operating voltage: 68V
Gain: 18dB
Operating frequency: 1.96GHz
Product Advantages
Excellent RF performance
High reliability and durability
Compact surface mount package
Key Technical Parameters
Technology: LDMOS
Package: PLD-1.5, Tape & Reel
RoHS compliance: ROHS3 Compliant
Quality and Safety Features
Robust design for high reliability
Compliant with industry safety standards
Compatibility
Compatible with various RF power amplifier circuits and systems
Application Areas
RF power amplifiers
Wireless communications equipment
Industrial and commercial RF applications
Product Lifecycle
This product is currently in active production
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Excellent RF performance with high power output and gain
Compact and reliable surface mount package
Proven LDMOS technology for long-lasting operation
Compliance with RoHS and industry safety standards
Suitability for a wide range of RF power applications