Manufacturer Part Number
MRF8S9200NR3
Manufacturer
NXP Semiconductors
Introduction
High-power LDMOS field-effect transistor (FET) designed for use in high-efficiency RF power amplifier applications
Product Features and Performance
Power output of 58W
Operating frequency of 940MHz
Gain of 19.9dB
Voltage rating of 70V
Test current of 1.4A
Test voltage of 28V
Product Advantages
Efficient power amplification
Reliable and robust performance
Suitable for high-frequency RF applications
Key Technical Parameters
LDMOS technology
Surface mount package (OM-780-2)
RoHS3 compliant
Quality and Safety Features
Rigorous quality control and testing
Compliance with RoHS3 regulations
Compatibility
Designed for use in high-efficiency RF power amplifier applications
Application Areas
Wireless communication systems
Radar systems
Broadcasting equipment
Industrial, scientific, and medical (ISM) applications
Product Lifecycle
Current product offering, no discontinuation or replacement information available
Key Reasons to Choose This Product
High power output and efficiency
Reliable and robust performance
Suitable for a wide range of high-frequency RF applications
RoHS3 compliance for environmental responsibility
