Manufacturer Part Number
MRF8S9120NR3
Manufacturer
NXP Semiconductors
Introduction
The MRF8S9120NR3 is a high-performance RF power MOSFET transistor designed for use in a wide range of radio frequency (RF) power amplifier applications.
Product Features and Performance
High power output of 33W
Low noise figure of 19.8dB
Capable of operating at a frequency of 960MHz
Supports a rated voltage of 70V and a test voltage of 28V
Able to withstand a test current of 800mA
Product Advantages
Optimized for efficient power amplifier designs
Excellent linearity and gain performance
Robust and reliable LDMOS technology
Suitable for surface mount applications
Key Technical Parameters
Technology: LDMOS
Power Output: 33W
Current (Test): 800mA
Voltage (Rated): 70V
Voltage (Test): 28V
Gain: 19.8dB
Frequency: 960MHz
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 compliant
Manufacturer's packaging: OM-780-2
Compatibility
Supplier Device Package: OM-780-2
Package: Tape & Reel (TR)
Application Areas
RF power amplifier designs
Wireless communication systems
Broadband wireless access
Radar systems
Product Lifecycle
This product is an active and available component from the manufacturer.
Replacement options or upgrades may be available from the manufacturer or through authorized distributors.
Key Reasons to Choose This Product
Excellent power output and efficiency for RF power amplifier applications
Reliable and robust LDMOS technology for long-term performance
Suitable for surface mount assembly and integration into various system designs
Compliance with RoHS regulations for environmental responsibility
Readily available and supported by the manufacturer and distribution network
