Manufacturer Part Number
MRF5S9070NR1
Manufacturer
NXP Semiconductors
Introduction
High-performance radio frequency (RF) power MOSFET transistor
Product Features and Performance
14W output power
High gain of 17.8dB
Wide operating voltage range up to 68V
Designed for 880MHz frequency applications
Surface mount package for easy integration
Product Advantages
Efficient power conversion with low power dissipation
Robust design for reliable operation
Compact surface mount package saves board space
Key Technical Parameters
Output Power: 14W
Current (Test): 600mA
Voltage (Rated): 68V
Gain: 17.8dB
Voltage (Test): 26V
Frequency: 880MHz
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Reliable TO-270-2 package
Compatibility
Suitable for a variety of RF power amplifier designs
Application Areas
Wireless infrastructure equipment
Broadcast transmitters
Industrial RF power applications
Product Lifecycle
Current production model, no plans for discontinuation
Upgrades and replacement options available as technology evolves
Key Reasons to Choose This Product
High power output and efficiency for improved system performance
Wide operating voltage range for design flexibility
Compact surface mount package for space-constrained applications
Reliable and environmentally-friendly design
Well-suited for 880MHz frequency applications
