Manufacturer Part Number
MRF5S9101NR1
Manufacturer
NXP Semiconductors
Introduction
High-power LDMOS transistor for RF and microwave applications
Product Features and Performance
100W output power
5dB gain
960MHz operating frequency
68V rated voltage
700mA test current
26V test voltage
Product Advantages
Robust and reliable LDMOS technology
Excellent power handling and efficiency
Suitable for high-frequency RF and microwave applications
Key Technical Parameters
LDMOS technology
100W output power
5dB gain
960MHz operating frequency
68V rated voltage
700mA test current
26V test voltage
Quality and Safety Features
RoHS3 compliant
TO-270AB package
Compatibility
Surface mount package
Compatible with various RF and microwave applications
Application Areas
Radio frequency (RF) power amplifiers
Microwave communications equipment
Wireless infrastructure
Broadcast transmitters
Product Lifecycle
This product is an active and widely used component
Replacement and upgrade options are available from NXP Semiconductors
Several Key Reasons to Choose This Product
High output power of 100W
Excellent gain of 17.5dB
Suitable for 960MHz frequency applications
Reliable and robust LDMOS technology
RoHS3 compliant for environmental safety
Surface mount package for easy integration
