MMZ09332BT1 - NXP USA Inc.

Manufacturer Part Number

MMZ09332BT1

Manufacturer

NXP Semiconductors

Introduction

High-performance RF amplifier with excellent linearity and efficiency for 4G LTE, TDS-CDMA, and W-CDMA applications.

Product Features and Performance

Frequency range: 130 MHz to 1 GHz

Gain: 31 dB

Test frequency: 1 GHz

Current consumption: 240 mA

P1dB: 32 dBm

Suitable for LTE, TDS-CDMA, and W-CDMA RF applications

Product Advantages

High linearity and efficiency for improved system performance

Compact 12-QFN (3x3) package for space-constrained designs

Suitable for a wide range of 4G cellular communication applications

Key Technical Parameters

Supply voltage: 5 V

Package: 12-VFQFN Exposed Pad

Mounting type: Surface mount

Quality and Safety Features

RoHS3 compliant

Compatibility

Compatible with 4G cellular communication standards

Application Areas

4G LTE, TDS-CDMA, and W-CDMA RF applications

Product Lifecycle

This product is currently available and not nearing discontinuation.

Several Key Reasons to Choose This Product

High-performance RF amplifier with excellent linearity and efficiency

Suitable for a wide range of 4G cellular communication applications

Compact 12-QFN (3x3) package for space-constrained designs

RoHS3 compliant for environmental compatibility