MMZ09312BT1 - NXP USA Inc.

Manufacturer Part Number

MMZ09312BT1

Manufacturer

NXP Semiconductors

Introduction

The MMZ09312BT1 is a high-performance RF amplifier integrated circuit (IC) manufactured by NXP Semiconductors.

Product Features and Performance

Frequency range: 400MHz to 1GHz

Gain: 31.7dB

Test frequency: 900MHz

Noise figure: 4dB

Supply current: 74mA

1dB compression point (P1dB): 29.6dBm

Suitable for CDMA and GSM RF applications

Product Advantages

High gain and low noise figure for improved signal quality

Wide frequency range for versatile applications

Compact 12-QFN (3x3) package for space-efficient design

Key Technical Parameters

Frequency range: 400MHz to 1GHz

Gain: 31.7dB

Noise figure: 4dB

Supply current: 74mA

Supply voltage: 3V to 5V

1dB compression point (P1dB): 29.6dBm

Quality and Safety Features

RoHS3 compliant for environmental responsibility

12-QFN (3x3) package with exposed pad for improved thermal performance and reliability

Compatibility

Suitable for use in CDMA and GSM RF applications

Application Areas

Wireless communication systems

RF front-end amplifiers

Cellular base stations

Portable devices

Product Lifecycle

The MMZ09312BT1 is an active product, and NXP Semiconductors continues to manufacture and support it.

Replacements and upgrades may be available, depending on market demand and technology advancements.

Key Reasons to Choose This Product

High-performance RF amplification with low noise figure

Wide frequency range for versatile applications

Compact and thermally efficient package design

RoHS3 compliance for environmental sustainability

Suitable for use in CDMA and GSM RF systems