AFV09P350-04NR3 - NXP USA Inc.

Manufacturer Part Number

AFV09P350-04NR3

Manufacturer

NXP Semiconductors

Introduction

The AFV09P350-04NR3 is a high-performance, LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor designed for Radio Frequency (RF) power amplifier applications.

Product Features and Performance

Capable of delivering up to 100W of output power

Operates at a frequency of 920MHz

Provides a gain of 19.5dB

Tests at a voltage of 48V and a current of 860mA

Surface mount package for easy integration

Product Advantages

Robust LDMOS technology for reliable performance

Optimized for high-efficiency RF power amplifier designs

Compact surface mount package for space-saving applications

Excellent thermal management capabilities

Key Technical Parameters

Voltage Rating: 105V

Power Output: 100W

Frequency: 920MHz

Gain: 19.5dB

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Robust construction for reliable operation

Compatibility

Suitable for a variety of RF power amplifier applications

Application Areas

Wireless communications

Broadcasting

Industrial RF power amplifiers

Product Lifecycle

Current production model

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

High output power and efficiency for RF power amplifier designs

Reliable LDMOS technology for long-term performance

Compact surface mount package for space-saving integration

RoHS3 compliance for environmental considerations

Proven performance in a variety of RF power amplifier applications