Manufacturer Part Number
A3G35H100-04SR3
Manufacturer
NXP Semiconductors
Introduction
RF Power Transistor
Product Features and Performance
14W output power
80mA test current
125V rated voltage
14dB gain at 3.6GHz
48V test voltage
4GHz to 3.6GHz frequency range
Product Advantages
High power and efficiency
Wide frequency range
Compact surface mount package
Key Technical Parameters
Technology: GaN
Configuration: 2 N-Channel
Packaging: NI-780S-4L
Quality and Safety Features
Robust GaN technology
Reliable surface mount package
Compatibility
Compatible with various RF applications
Application Areas
Radio frequency (RF) power amplifiers
Wireless communication systems
Base stations
Radar systems
Product Lifecycle
Currently available product
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High output power
Wide frequency range
Efficient GaN technology
Compact and reliable packaging
Suitable for various RF applications