Manufacturer Part Number
TIP32CTU
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, high-current PNP silicon power transistor
Product Features and Performance
High voltage: Up to 100V collector-emitter breakdown voltage
High current: Up to 3A collector current
High power: Up to 2W power dissipation
Wide temperature range: -65°C to +150°C junction temperature
High DC current gain: Minimum 25 at 1A, 4V
Fast switching speed: 3MHz transition frequency
Product Advantages
Suitable for high-voltage, high-current switching and amplifier applications
Robust design with high reliability
Ease of use with through-hole mounting
Key Technical Parameters
Collector-Emitter Voltage (VCEO): 100V
Collector Current (IC): 3A
Power Dissipation (PD): 2W
Junction Temperature (TJ): -65°C to +150°C
Quality and Safety Features
RoHS3 compliant
Meets industrial quality and safety standards
Compatibility
Can be used as a replacement or upgrade for similar PNP bipolar transistors in various electronic circuits and applications
Application Areas
Power amplifiers
Switching regulators
Motor controls
Industrial equipment
Automotive electronics
Product Lifecycle
This product is currently in active production and available for purchase
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
High voltage and current handling capability
Robust and reliable performance
Ease of integration with through-hole mounting
Compliance with industry quality and safety standards
Suitability for a wide range of high-power electronic applications