TIP32CTU - onsemi

Manufacturer Part Number

TIP32CTU

Manufacturer

onsemi

Introduction

This is a PNP bipolar junction transistor (BJT) from onsemi, designed for general-purpose amplifier and switching applications.

Product Features and Performance

Capable of handling up to 3A of collector current

Supports a maximum collector-emitter voltage of 100V

Transition frequency of 3MHz

Provides a minimum DC current gain (hFE) of 10 at 3A collector current and 4V collector-emitter voltage

Maximum collector-emitter saturation voltage of 1.2V at 375mA base current and 3A collector current

Product Advantages

Robust package design (TO-220-3)

Suitable for a wide range of power amplifier and switching applications

Good thermal performance with a maximum junction temperature of 150°C

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 100V

Collector Current (IC): 3A

Collector Cutoff Current (ICBO): 200μA

DC Current Gain (hFE): 10 (min) at 3A, 4V

Transition Frequency (fT): 3MHz

Quality and Safety Features

Meets relevant industry standards for reliability and safety

Robust design for long-term operation

Compatibility

Suitable for use in a variety of electronic circuits and applications

Application Areas

Power amplifiers

Switching circuits

General-purpose amplifier applications

Product Lifecycle

This product is currently in production and widely available

No plans for discontinuation in the near future

Key Reasons to Choose This Product

Reliable and robust performance for a wide range of applications

Competitive pricing and availability

Proven track record of quality and reliability from onsemi

Suitable for both professional and hobbyist use