Manufacturer Part Number
SGL50N60RUFDTU
Manufacturer
Fairchild (onsemi)
Introduction
High-performance IGBT (Insulated Gate Bipolar Transistor) device for industrial and power electronics applications.
Product Features and Performance
600V, 80A IGBT with low on-state voltage drop and fast switching speed
Optimized for high-frequency, high-efficiency switching applications
Low conduction and switching losses
Robust short-circuit withstand capability
Product Advantages
Improved efficiency and reduced system size/cost
Enhanced reliability and system performance
Suitable for a wide range of industrial and power electronics applications
Key Technical Parameters
Voltage: 600V Collector-Emitter Breakdown Voltage
Current: 80A Collector Current
Low Vce(on): 2.8V @ 15V, 50A
Fast Switching: 26ns turn-on, 66ns turn-off delay times
Quality and Safety Features
Rugged design with high thermal cycling capability
Excellent short-circuit withstand capability
Compliant with relevant safety standards
Compatibility
Compatible with standard IGBT gate driver circuits
Suitable for a variety of industrial and power electronics applications
Application Areas
Industrial motor drives
Power supplies
Renewable energy systems
Welding equipment
Home appliances
General industrial power electronics
Product Lifecycle
Currently in active production
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
High efficiency and performance
Reliable and robust design
Suitable for a wide range of industrial and power electronics applications
Backed by the expertise and support of Fairchild (onsemi), a leading semiconductor manufacturer