SGL50N60RUFDTU - onsemi

Manufacturer Part Number

SGL50N60RUFDTU

Manufacturer

onsemi

Introduction

IGBT transistor for power switching applications

Product Features and Performance

600V collector-emitter breakdown voltage

80A collector current rating

250W power rating

100ns reverse recovery time

145nC gate charge

150A pulsed collector current

Product Advantages

Robust and reliable performance

Efficient power switching

Suitable for high-power applications

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 600V

Current Collector (Ic) (Max): 80A

Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A

Reverse Recovery Time (trr): 100ns

Gate Charge: 145nC

Current Collector Pulsed (Icm): 150A

Switching Energy: 1.68mJ (on), 1.03mJ (off)

Td (on/off) @ 25°C: 26ns/66ns

Quality and Safety Features

RoHS3 compliant

Suitable for operation in -55°C to 150°C temperature range

Compatibility

TO-264-3, TO-264AA package

Through hole mounting

Application Areas

Power conversion and control

Motor drives

Inverters

Switching power supplies

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacements and upgrades may be available from the manufacturer.

Key Reasons to Choose This Product

Robust and reliable performance for high-power applications

Efficient power switching capabilities

Wide operating temperature range

Compact and compatible package