Manufacturer Part Number
PN2907ATA
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
TO-92-3 Package
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Operating Temperature Range: -55°C to 150°C (TJ)
Power Rating: 625 mW
Collector-Emitter Breakdown Voltage (Max): 60 V
Collector Current (Max): 800 mA
Collector Cutoff Current (Max): 20 nA (ICBO)
Collector-Emitter Saturation Voltage (Max): 1.6 V @ 50 mA, 500 mA
Transistor Type: PNP
DC Current Gain (hFE) (Min): 100 @ 150 mA, 10 V
Transition Frequency: 200 MHz
Through Hole Mounting
Product Advantages
Reliable performance in a wide range of applications
Compact and space-saving package options
Suitable for high-current and high-voltage applications
Key Technical Parameters
Power Rating
Breakdown Voltage
Maximum Collector Current
Saturation Voltage
DC Current Gain
Transition Frequency
Quality and Safety Features
Rigorous quality control and testing processes
Compliance with industry safety standards
Compatibility
Suitable for use in a variety of electronic circuits and systems
Application Areas
Amplifiers
Switches
Power supplies
Audio circuits
General-purpose electronic devices
Product Lifecycle
This product is an active and widely available part
Replacement or upgraded options may be available from the manufacturer
Key Reasons to Choose This Product
Reliable and efficient performance
Versatile package options
Suitable for a wide range of applications
Compliance with industry standards for quality and safety