Manufacturer Part Number
PN2907ABU
Manufacturer
onsemi
Introduction
The PN2907ABU is a high-performance bipolar junction transistor (BJT) in a TO-92-3 package. It is a PNP transistor suitable for a variety of electronic applications.
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
High power rating of 625mW
High collector-emitter breakdown voltage of 60V
High collector current of 800mA
Low collector cutoff current of 20nA
Efficient operation with low collector-emitter saturation voltage of 1.6V
High current gain (hFE) of 100 or more
High transition frequency of 200MHz
Product Advantages
Robust and reliable performance
Compact and space-saving TO-92-3 package
Suitable for a wide range of applications
RoHS3 compliant for eco-friendly usage
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 60V
Collector Current (Max): 800mA
Collector Cutoff Current (Max): 20nA
Collector-Emitter Saturation Voltage (Max): 1.6V
DC Current Gain (hFE) (Min): 100
Transition Frequency: 200MHz
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Rigorous quality control and testing processes
Reliable and long-lasting performance
Compatibility
The PN2907ABU is a standard PNP bipolar junction transistor and is compatible with a wide range of electronic circuits and applications.
Application Areas
Amplifiers
Switches
Voltage regulators
Biasing circuits
Audio and power electronics
General-purpose electronic circuits
Product Lifecycle
The PN2907ABU is an actively supported and readily available product. There are no plans for discontinuation, and replacement or upgrade options are readily accessible.
Key Reasons to Choose This Product
Robust and reliable performance across a wide temperature range
High power handling capability and efficient operation
Compact and space-saving TO-92-3 package
Compatibility with a wide range of electronic applications
RoHS3 compliance for environmentally responsible use
Readily available and actively supported product lifecycle