NDS9952A - Fairchild Semiconductor

Manufacturer Part Number

NDS9952A

Manufacturer

Fairchild (onsemi)

Introduction

Discrete Semiconductor Products

Transistors FETs, MOSFETs Arrays

Product Features and Performance

8-SOIC (0.154", 3.90mm Width) package

N and P-Channel configuration

30V Drain to Source Voltage (Vdss)

80mOhm Rds On (Max) @ 1A, 10V

MOSFET (Metal Oxide) technology

7A, 2.9A Continuous Drain Current (Id) @ 25°C

320pF Input Capacitance (Ciss) (Max) @ 10V

Logic Level Gate FET Feature

8V Vgs(th) (Max) @ 250A

25nC Gate Charge (Qg) (Max) @ 10V

Product Advantages

Wide operating temperature range of -55°C to 150°C (TJ)

High power handling capability of 900mW

Suitable for surface mount applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 10V

Continuous Drain Current (Id) @ 25°C: 3.7A, 2.9A

Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V

Vgs(th) (Max) @ Id: 2.8V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V

Quality and Safety Features

Industrial-grade operating temperature range of -55°C to 150°C (TJ)

Robust MOSFET (Metal Oxide) technology

Compatibility

Surface mount package (8-SOIC)

Application Areas

Suitable for a wide range of electronic circuits and devices

Product Lifecycle

Current production model, no known discontinuation plans

Replacements and upgrades may be available from the manufacturer

Key Reasons to Choose This Product

Wide operating temperature range

High power handling capability

Suitable for surface mount applications

Robust MOSFET (Metal Oxide) technology

Competitive technical specifications compared to similar products