Manufacturer Part Number
NDS9952A
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
N and P-Channel MOSFET Array
Product Features and Performance
Drain to Source Voltage (Vdss) of 30V
Rds On (Max) of 80mOhm @ 1A, 10V
Continuous Drain (Id) Current of 3.7A @ 25°C
Input Capacitance (Ciss) of 320pF @ 10V
Gate Charge (Qg) of 25nC @ 10V
Logic Level Gate with Vgs(th) (Max) of 2.8V @ 250A
Operating Temperature Range of -55°C to 150°C
Product Advantages
Compact 8-SOIC surface mount package
MOSFET technology provides high efficiency and fast switching
Suitable for a variety of power management and control applications
Key Technical Parameters
Package: 8-SOIC (0.154", 3.90mm Width)
Power Dissipation: 900mW
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
Can be used in a variety of power management and control applications
Application Areas
Power management circuitry
Motor controls
Switch-mode power supplies
General purpose power control
Product Lifecycle
Current product, no discontinuation plans identified
Key Reasons to Choose This Product
High efficiency and fast switching MOSFET technology
Compact surface mount package
Wide operating temperature range
Suitable for a variety of power management and control applications