Manufacturer Part Number
KST5551MTF
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
RoHS3 Compliant
SOT-23-3 Package
Maximum Operating Temperature: 150°C
Maximum Power: 350 mW
Maximum Collector-Emitter Breakdown Voltage: 160 V
Maximum Collector Current: 600 mA
Maximum Collector Cutoff Current: 50 nA
Maximum Collector-Emitter Saturation Voltage: 200 mV
Minimum DC Current Gain (hFE): 80
Transition Frequency: 300 MHz
Product Advantages
Compact surface mount package
High-performance bipolar transistor
Suitable for a wide range of applications
Key Technical Parameters
Transistor Type: NPN
Packaging: SOT-23-3
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 compliant
Compatibility
Can be used in various electronic circuits and applications
Application Areas
Amplifiers
Switches
Logic gates
Driver circuits
Product Lifecycle
Current production status, no information on discontinuation or replacements
Key Reasons to Choose This Product
High-performance NPN bipolar transistor
Compact surface mount package
Wide operating temperature range
Suitable for a variety of electronic applications