Manufacturer Part Number
KST5551MTF
Manufacturer
onsemi
Introduction
The KST5551MTF is a high-voltage, high-current NPN bipolar junction transistor (BJT) designed for a variety of power management and switching applications.
Product Features and Performance
High voltage rating of 160V
High current capability of 600mA
High transition frequency of 300MHz
Low collector-emitter saturation voltage of 200mV @ 5mA, 50mA
High DC current gain of 80 @ 10mA, 5V
Product Advantages
Suitable for high-voltage, high-current applications
Fast switching speed for efficient power conversion
Low on-state resistance for low power loss
Reliable performance in a compact SOT-23-3 package
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 160V
Current Collector (Ic) (Max): 600mA
Current Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency Transition: 300MHz
Quality and Safety Features
Designed and manufactured to onsemi's high quality standards
Suitable for operation up to 150°C junction temperature
RoHS compliant for environmentally-conscious applications
Compatibility
Suitable for a wide range of power management and switching applications
Can be used in place of other similar NPN BJT devices in the same package
Application Areas
Power supplies
Motor drives
Switching regulators
Amplifiers
Lighting control
Industrial automation
Product Lifecycle
This product is currently in active production and not nearing discontinuation
Replacement or upgraded parts may become available in the future as technology evolves
Several Key Reasons to Choose This Product
High voltage and current capability for demanding applications
Fast switching speed for efficient power conversion
Low on-state resistance for low power loss
Reliable performance in a compact surface mount package
Manufactured to onsemi's high quality standards
Suitable for a wide range of power management and switching applications
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