KST10MTF - Fairchild Semiconductor

Manufacturer Part Number

KST10MTF

Manufacturer

Fairchild (onsemi)

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) for RF applications

Product Features and Performance

NPN transistor

650MHz transition frequency

350mW maximum power

25V maximum collector-emitter breakdown voltage

60 minimum DC current gain (hFE) at 4mA, 10V

Product Advantages

Suitable for RF and high-frequency applications

Compact surface mount package

Good high-frequency performance

Key Technical Parameters

Transistor Type: NPN

DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V

Frequency Transition: 650MHz

Power Max: 350mW

Voltage Collector Emitter Breakdown (Max): 25V

Quality and Safety Features

Reliable performance in surface mount package

Compatibility

TO-236-3, SC-59, SOT-23-3 package

Application Areas

RF and high-frequency circuits

Amplifiers

Switches

Oscillators

Product Lifecycle

Active product

Replacements and upgrades available

Several Key Reasons to Choose This Product

High-frequency performance up to 650MHz

Compact surface mount package

Good DC current gain and power handling

Suitable for a variety of RF and high-frequency applications