Manufacturer Part Number
KST10MTF
Manufacturer
onsemi
Introduction
The KST10MTF is a high-frequency NPN bipolar junction transistor (BJT) designed for RF applications. It offers excellent performance and reliability.
Product Features and Performance
650MHz transition frequency for high-speed switching
60 minimum DC current gain (hFE) at 4mA, 10V
350mW maximum power dissipation
25V maximum collector-emitter breakdown voltage
Product Advantages
Optimized for RF applications
Reliable performance
Small surface mount package
Key Technical Parameters
Transistor Type: NPN
Power Rating: 350mW
Collector-Emitter Breakdown Voltage: 25V
DC Current Gain (hFE): 60 @ 4mA, 10V
Transition Frequency: 650MHz
Quality and Safety Features
RoHS3 compliant
Housed in a compact SOT-23-3 package
Compatibility
Surface mount assembly
Application Areas
RF amplifiers
Switches
Oscillators
Mixers
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose
High-frequency performance
Reliable and efficient operation
Small and space-saving package
Compliance with industry standards